This chapter shows the measurement procedure of junction depth using SIMS method with detailed experimental procedure, and the result is verified by theoretical computation. SIMS profile is analytically characterized by Pearson's distribution function, and all the results together established the fact that the device can be utilized for operating as a diode in RF range; where ion dose is considered as a variable parameter with ion energy. Implanted impurity distribution profile is obtained as a function of depletion width from which junction depth can be evaluated. Straggle parameters and projected range profile near the ion energy range is computed for which depth is evaluated, and skewness & kurtosis are estimated to get a theoretical knowledge of all the moments assuming the Pearson IV distribution. Results suggest that distribution of atoms may be considered as Gaussian in nature.
TopIntroduction
Present research of nanoelectronic device fabrication is one of the promising fields for the experimental as well as for theoretical device researchers in order to explore novel electronic and photonic properties of the low-dimensional devices compared to their bulk counterparts. With shrinking dimension of electronic and optoelectronic devices in the last two decades following Moore’s law, novel complex multi-layer structures are designed to serve specific applications. Due to lowering of device size in sub-micrometer region, quantum confinement effect starts to dominate, which leads to several novel structures, nomenclature as quantum well (Uomi 2019; Amargianitakis et. al. 2019), wire (Yakimenko et. al. 2019; Kerner 2018), dot (Chinnathambi & Shirahata 2019; Lu et. al. 2019) etc. Owing to equivalence of device dimension with de-Broglie wavelength, carrier motions are confined in different directions leads to internment. Thanks to the acquaintance with the existing fabrication methodologies for these submicron devices, complex geometrical structures proposed by theoretical workers, are now practically realizable (Chen et. al. 2019; Drouin et. al. 2017; Yang et. al. 2018), where quantum phenomena dominate their behavior under the presence of various external excitations (Sadeghzadeh & Rezapour 2016; Wulf et. al. 2017). Properties of these low-dimensional devices critically depend on layer widths, whose growth can precisely be monitored during fabrication process (Franckié et. al. 2019; Su et. al. 2018; Molla et. al. 2019). Recent developments of fabrication technology lead to successful physical manifestation of several nanoelectronic devices (Meel et. al. 2018; Giraud et. al. 2018; Karmakar 2019), many of which has arbitrary potential distributions (Abdolkader et. al. 2018; Lin et. al. 2018) leading to controlled electron flow in desired directions. Shape of the potential in a composite heterostructure depends on the individual material properties, along with the junctions formed. Surface potential at junctions can greatly be affected due to electrical and mechanical dissimilarities between two layers, and with change of layer thickness in either side of the junction guided to a change of the electrical properties. Researches are carried out so far (Androulidakis et. al. 2018; Liao et. al. 2017) in this regard, which reveals the importance of fabrication procedure and its measurement.
The expected properties for specific applications, as computed by different numerical methods (Deyasi & Sarkar 2018; Quhe et. al. 2018), or by analytical means (Stepnicki et. al. 2015; Pal & Sarkar 2014), can be matched with experimental outputs, where accuracy of fabrication instruments or characterization tools and their handling are near-perfect, and here lies the importance of understanding the behavior of electrons and their internal distributions in the device. Since the devices are in sub-micron level, so any minute fluctuation in the carrier distributions leads to a radical change from the expected outcome. Henceforth, precise measurement of carrier distributions play a crucial role in shaping the device performance, and modern instruments is therefore required prior to packaging the product for internal analysis.